Method used for forming metallic conductor structure
The invention relates to a method for carrying out plated metal on a semiconductor material having a substare or a layer surface format, such as a solar cell, and especially relates to a conventional method for optimizing an emittor structure used for supplying a selectivity, so that the technical c...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a method for carrying out plated metal on a semiconductor material having a substare or a layer surface format, such as a solar cell, and especially relates to a conventional method for optimizing an emittor structure used for supplying a selectivity, so that the technical characteristic of the produced product can be improved. The method comprises the steps of providing discrete textured areas of the semiconductor material by selective removal of the protective layer, and carrying out galvanic deposition of a metallic seed layer and subsequently at least one further metal layer to form metallic conductor pattern on the surface of the substrate made of the semiconductor material, exhibiting a protective layer, so that the surface of the substrate is applied with a hydrophobic substance before or after the depositing the starting layer. |
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