Dissymmetric waveguide 1060nm semiconductor laser structure

The invention relates to a dissymmetric waveguide1060nm semiconductor laser structure which belongs to the technical field of semiconductor photoelectronics. The structure comprises a substrate, a buffer layer, an N-type lower limit layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, a P-type upper limit layer, a transition layer and an electrode contact layer, wherein the substrate is made of a (100)-face N-type GaAs material and used for epitaxial growth of various layers of materials of a laser on the substrate; the buffer layer is arranged on the substrate and made of the N-type GaAs material; the N-type lower limit layer is arranged on the buffer layer and made of an N-type InGaAsP material; the lower waveguide layer is arranged on the lower limit layer and made of the N-type InGaAs material; the quantum well layer is made of an InGaAs single quantum well material and manufactured on the lower waveguide layer; the upper waveguide layer is made of a P-type AlGaAs material and a