Method for preparing SiOx-SiNx laminated films of crystal silicon solar cell

The invention discloses a method for preparing SiOx-SiNx laminated films of a crystal silicon solar cell. The method comprises the step of coating an antireflective film on crystalline silicon glass after the processes of cleaning, making herbs into wool, diffusing by phosphorus, etching by plasma, and removing phosphorosilicate glass. The method is characterized in that the SiOx-SiNx laminated films are deposited at two surfaces of a silicon chip by a plasma-enhanced chemical vapor deposition method. The SiOx-SiNx laminated films are deposited at the upper surface and the lower surface of the silicon chip. The SiOx-SiNx laminated films are adopted as antireflection passivating films of an emitter of the solar cell. Therefore, the defects of poor adhesive ability of the silicon chip, large structure interface stress and high interface state density when silicon nitride is directly deposited on the silicon chip are overcome, and the passivating effect is also improved.