Preparation method of back polished silicon chip

The invention discloses a preparation method of a back polished silicon chip. The preparation method of the back polished silicon chip is characterized by comprising the following steps: cleaning surface phosphate glass of the diffused silicon chip with mixed solution of hydrofluoric acid and nitric...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HOU ZERONG, CUI MEILAN, WANG JINWEI, HUANG LUN, SHI MENGJIE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The invention discloses a preparation method of a back polished silicon chip. The preparation method of the back polished silicon chip is characterized by comprising the following steps: cleaning surface phosphate glass of the diffused silicon chip with mixed solution of hydrofluoric acid and nitric acid, etching the back with the mixed solution of hydrofluoric acid, nitric acid and sulphuric acid after finishing cleaning to exert a polishing effect; then cleaning porous silicon produced from the reaction with sodium hydroxide solution, neutralizing alkaline liquor with the hydrofluoric acid; finally cleaning the surface of the silicon chip with pure water, and drying with hot air. According to the back polished silicon chip fabricated by the method disclosed by the invention, the battery light absorption is improved, the battery conversion efficiency is improved, and the production cost is reduced.