Crystal growth device

Crystal growth device

The invention discloses a crystal growth device. The crystal growth device comprises a crucible, and a heat field supply which is positioned outside the crucible and heats the crucible to form a heat field; the crucible comprises a container groove having an opening and used for accommodating a crys...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LAN CHONGWEN, XU SONGLIN, BAI KAIYUAN, YU WENHUAI, YANG YUMIN, LAN WENJIE, XU WENQING
Format: Patent
Sprache:chi ; eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:The invention discloses a crystal growth device. The crystal growth device comprises a crucible, and a heat field supply which is positioned outside the crucible and heats the crucible to form a heat field; the crucible comprises a container groove having an opening and used for accommodating a crystal growth raw material; and the heat field supply comprises a heating unit surrounding the crucible and heating the crucible, and a heat insulation unit arranged at the bottom of the heating unit, and the heat field supply can move between a first position and a second position relative to the crucible to form two heat fields having a temperature difference for the crucible. The crystal growth raw material in the crucible allows crystal growth to be controllably carried out in the heat field structures having an obvious temperature gradient in order to obtain good crystals having many twinning crystal boundaries.