Chemical mechanical polishing method for preventing wafer from sliding

Chemical mechanical polishing method for preventing wafer from sliding

The invention provides a chemical mechanical polishing (CMP) method for preventing a wafer from sliding, which belongs to the technical field of semiconductor manufacturing. The CMP method comprises a preparation step before polishing; the preparation step before polishing is extended to include a f...

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Hauptverfasser: FAN YIPING, ZENG MING, LI WANSHAN, CAI ZONGCHENG
Format: Patent
Sprache:chi ; eng
Schlagworte:
DRESSING OR CONDITIONING OF ABRADING SURFACES
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
TRANSPORTING
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creator FAN YIPING
ZENG MING
LI WANSHAN
CAI ZONGCHENG
description The invention provides a chemical mechanical polishing (CMP) method for preventing a wafer from sliding, which belongs to the technical field of semiconductor manufacturing. The CMP method comprises a preparation step before polishing; the preparation step before polishing is extended to include a first preparation step before polishing and a second preparation step before polishing; and in the first preparation step before polishing and the second preparation step before polishing, the pressure parameter of a clamping ring (RR) is larger than that of a membrane (MM). Through the adoption of the CMP method provided by the invention, the wafer can be prevented from sliding, and simple method and low cost are achieved.
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subjects DRESSING OR CONDITIONING OF ABRADING SURFACES
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
TRANSPORTING
title Chemical mechanical polishing method for preventing wafer from sliding
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