Chemical mechanical polishing method for preventing wafer from sliding

The invention provides a chemical mechanical polishing (CMP) method for preventing a wafer from sliding, which belongs to the technical field of semiconductor manufacturing. The CMP method comprises a preparation step before polishing; the preparation step before polishing is extended to include a first preparation step before polishing and a second preparation step before polishing; and in the first preparation step before polishing and the second preparation step before polishing, the pressure parameter of a clamping ring (RR) is larger than that of a membrane (MM). Through the adoption of the CMP method provided by the invention, the wafer can be prevented from sliding, and simple method and low cost are achieved.