Semiconductor laser chip structure suitable for being welded reversely

The invention relates to the technical field of semiconductor lasers and provides a semiconductor laser chip structure suitable for being welded reversely. The semiconductor laser chip structure mainly comprises a substrate layer 1, a buffer layer 2, an N-type wrapping layer 3, a lower waveguide layer 4, an active area 5, an upper waveguide layer 6, a P-type wrapping layer 7, a transition layer 8, a P-type contact layer 9, a ridge-shaped table surface 10, a current limiting channel 11 and a separation channel 12. The semiconductor laser chip structure can improve the contact area between a tube core of a semiconductor laser and welding flux and between the tube core of the semiconductor laser and heat sink, so that the compression resisting capability and the radiating performance of the tube core are improved, and the phenomenon of short circuit caused by climbing of the welding flux is avoided.