High-frequency and low-noise gallium nitride transistor structure with high electronic mobility

The invention relates to a high-frequency and low-noise gallium nitride transistor structure with high electronic mobility. The structure comprises a substrate, an aluminium nitride nucleating layer arranged on the substrate and a gallium nitride cushioning layer arranged on the aluminium nitride nu...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YAN BO, XU YUEHANG, LAN GUILIN, XU RUIMIN, QIU YIJIE, GUO YUNCHUAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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