High-frequency and low-noise gallium nitride transistor structure with high electronic mobility

The invention relates to a high-frequency and low-noise gallium nitride transistor structure with high electronic mobility. The structure comprises a substrate, an aluminium nitride nucleating layer arranged on the substrate and a gallium nitride cushioning layer arranged on the aluminium nitride nucleating layer; the substrate, the aluminium nitride nucleating layer and the gallium nitride cushioning layer are sequentially overlapped from bottom to top; the high-frequency and low-noise gallium nitride transistor structure with the high electronic mobility is characterized in that an InGaN inserting layer for improving roughness of a component interface, an aluminium nitride inserting layer for improving a potential barrier, an AlGaN isolating layer, an AlGaN electronic providing layer, an AlGaN potential barrier layer as well as a source electrode, a grid electrode and a drain electrode which are respectively in ohm connection with the AlGaN potential barrier layer are sequentially overlapped on the gallium