Crimping IGBT (insulated gate bipolar transistor) module and method for manufacturing same

The invention relates to a crimping IGBT (insulated gate bipolar transistor) module and a method for manufacturing the crimping IGBT module. The method comprises the following steps: (1) putting bottom molybdenum sheets in a sintered base, and putting an auxiliary clamping tool and a plurality of power semiconductor chips on the bottom molybdenum sheets; (2) fixing the power semiconductor chips on the bottom molybdenum sheets by sintering, and taking off the auxiliary clamping tool and the sintered base; (3) mounting a PCB (printed circuit board); (4) fixing a plurality of upper molybdenum sheets by using the PCB as the tool of positioning the upper molybdenum sheets; and (5) crimping pipe shells. The crimping IGBT module comprises the bottom molybdenum sheets, the power semiconductor chips, the PCB and the upper molybdenum sheets. The bottom molybdenum sheets are used for providing current and heat dissipation passages for the power semiconductor chips; the power semiconductor chips are fixed on the bottom molybdenum sheets by sintering; the PCB is arranged above the power semiconductor chips and connected with the bottom molybdenum sheets by positioning; and the upper molybdenum sheets are positioned and fixed by the PCB. The crimping IGBT module is simpler and compacter in integral structure, is easier to manufacture and assemble and has better connection reliability and heat dissipation performance.