Semiconductive compositions

The present invention is a polymer composite made from or containing: (i) a phase I material consisting essentially of a polar copolymer of ethylene and an unsaturated ester having 4 to 20 carbon atoms; (ii) a phase II material consisting essentially of a nonpolar, low density polyethylene; and (iii...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HAN SUH JOON, GOETHEL GABRIELE, KJELLQVIST JERKER B. L, MANGNUS MARC A
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Beschreibung
Zusammenfassung:The present invention is a polymer composite made from or containing: (i) a phase I material consisting essentially of a polar copolymer of ethylene and an unsaturated ester having 4 to 20 carbon atoms; (ii) a phase II material consisting essentially of a nonpolar, low density polyethylene; and (iii) a conducting filler material dispersed in the phase I material and/or the phase II material in an amount sufficient to be equal to or greater than the amount required to generate a continuous conducting network in the phase I and phase II materials. The invention also includes articles made from the polymer composite.