Etchants and methods of fabricating metal wiring and thin film transistor substrate using the same
The invention provides etchants and methods of fabricating metal wirings and thin film transistor substrates using the same. The etchant includes: a persulfate; a fluoride; an inorganic acid; a cyclic amine; a sulfonic acid; and one of an organic acid and a salt thereof.
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| creator | LEE SUCKJUN YU INHO PARK JI-YOUNG KIM SANGGAB CHOI SHIN IL JIN YOUNGJUN CHOUNG JONG-HYUN SONG JEANHO PARK YOUNGCHUL KWON O. BYOUNG LIM MINKI KIM SEON-IL JANG SANGHOON |
| description | The invention provides etchants and methods of fabricating metal wirings and thin film transistor substrates using the same. The etchant includes: a persulfate; a fluoride; an inorganic acid; a cyclic amine; a sulfonic acid; and one of an organic acid and a salt thereof. |
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The etchant includes: a persulfate; a fluoride; an inorganic acid; a cyclic amine; a sulfonic acid; and one of an organic acid and a salt thereof.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NATURAL RESINS NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PAINTS POLISHES SEMICONDUCTOR DEVICES |
| title | Etchants and methods of fabricating metal wiring and thin film transistor substrate using the same |
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