Etchants and methods of fabricating metal wiring and thin film transistor substrate using the same

The invention provides etchants and methods of fabricating metal wirings and thin film transistor substrates using the same. The etchant includes: a persulfate; a fluoride; an inorganic acid; a cyclic amine; a sulfonic acid; and one of an organic acid and a salt thereof.

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Bibliographische Detailangaben
Hauptverfasser: LEE SUCKJUN, YU INHO, PARK JI-YOUNG, KIM SANGGAB, CHOI SHIN IL, JIN YOUNGJUN, CHOUNG JONG-HYUN, SONG JEANHO, PARK YOUNGCHUL, KWON O. BYOUNG, LIM MINKI, KIM SEON-IL, JANG SANGHOON
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention provides etchants and methods of fabricating metal wirings and thin film transistor substrates using the same. The etchant includes: a persulfate; a fluoride; an inorganic acid; a cyclic amine; a sulfonic acid; and one of an organic acid and a salt thereof.