Integration of superjunction MOSFET and diode

The invention relates to integration of superjunction MOSFET and diode, and particularly provides a semiconductor and a a method of forming a semiconductor structure having a field effect transistor (FET) region and a Schottky region. A semiconductor structure comprises a semiconductor layer of a first conductivity type, trenches extending into the semiconductor layer, and a conductive layer of a second conductivity type lining sidewalls and bottom of each trench and forming PN junctions with the semiconductor layer. A first plurality of the trenches are disposed in a field effect transistor region that comprises a body region of the first conductivity type, source regions of the second conductivity type in the body region, and gate electrodes isolated from the body region and the source regions by a gate dielectric. A second plurality of the trenches are disposed in a Schottky region that comprises a conductive material contacting mesa surfaces of the semiconductor layer between adjacent ones of the second p