Cleaning agent for semiconductor provided with metal wiring

A cleaning agent for a microelectronic device provided with metal wiring, which has an excellent ability to remove polishing particle residues derived from a polishing agent and an excellent ability to remove metallic residues on an insulating film, and has excellent anticorrosiveness to the metal w...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YOSHIMOCHI HIROSHI, NAKANISHI MUTSUMI, KOJI YUKICHI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A cleaning agent for a microelectronic device provided with metal wiring, which has an excellent ability to remove polishing particle residues derived from a polishing agent and an excellent ability to remove metallic residues on an insulating film, and has excellent anticorrosiveness to the metal wiring. The cleaning agent is used at a step subsequent to chemical mechanical polishing in a manufacturing process of a microelectronic device in which a metal wiring, e.g., copper or tungsten, is formed.