Method for solidifying gallium-rich gallium arsenide melt used for liquid phase epitaxy

The invention discloses a method for solidifying gallium-rich gallium arsenide melt used for liquid phase epitaxy. The method is characterized in that after the epitaxial layer growth is finished, a gallium-rich gallium arsenide melt is subjected to rapid cooling, so that the melting source is in a melt state under the room temperature, for secondary epitaxial growth of the melting source, the solidification of the melt is required for sampling or loading in the liquid phase epitaxial growth, a microscale gallium solvent is added, and is rotated and stirred along clockwise or anticlockwise direction, the gallium-rich gallium arsenide melt can be solidified by following the motion of a crystal growth czochralski method. The invention has the advantages that a technology that microscale gallium crystal grains drive the melt to move for solidification is used, no pollution is generated during the operation process, the operation time is short, the exposure duration of melting source, graphite boat and a quartz t