Phase change vanadium dioxide film prepared by rapid thermal oxidation method

The present invention discloses a phase change vanadium dioxide film prepared by a rapid thermal oxidation method. The purpose of the present invention is to overcome disadvantages of more regulation parameters, complex process, poor experiment controllability in the existing preparation method for a vanadium dioxide film with a phase change characteristic. With the present invention, a metal vanadium film with a sputtering time of 10-30 minutes is subjected to rapid thermal oxidation for 30-90 seconds (wherein the thermal insulation time is the rapid thermal oxidation time) at a temperature of 430-500 DEG C to obtain the material with the thermal induced phase transition characteristic, wherein the temperature increasing speed is 50 DEG C per second, the temperature decreasing time is less than 3 minutes, and the working gas is high purity oxygen or nitrogen-oxygen mixed gas during the rapid thermal oxidation process. The method of present invention has high repeatability, and is suitable for large scale pro