Memory cell and memory based on organic field effect transistor and method for preparing memory cell
The invention discloses a memory cell and a memory based on organic field effect transistors and a method for preparing the memory cell. According to the memory cell, the unique molecular structure of a fullerene material is utilized, and a single layer fullerene film both as a storage floating-gate...
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| creator | LIU XIN CHEN YINGPING WANG YANHUA HAN MAIXING WANG HONG LIU MING SHANG LIWEI JI ZHUOYU |
| description | The invention discloses a memory cell and a memory based on organic field effect transistors and a method for preparing the memory cell. According to the memory cell, the unique molecular structure of a fullerene material is utilized, and a single layer fullerene film both as a storage floating-gate layer and a tunneling dielectric layer instead of metals or metal oxides for preparation of the memory cell is used, thereby reducing preparation cost and improving flexibility performance of the memory cell. |
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| title | Memory cell and memory based on organic field effect transistor and method for preparing memory cell |
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