Memory cell and memory based on organic field effect transistor and method for preparing memory cell

The invention discloses a memory cell and a memory based on organic field effect transistors and a method for preparing the memory cell. According to the memory cell, the unique molecular structure of a fullerene material is utilized, and a single layer fullerene film both as a storage floating-gate layer and a tunneling dielectric layer instead of metals or metal oxides for preparation of the memory cell is used, thereby reducing preparation cost and improving flexibility performance of the memory cell.