AlGaInP light-emitting diode (LED) chip and cutting method for same

The invention discloses an AlGaInP light-emitting diode (LED) chip, which comprises a GaAs substrate serving as an epitaxial layer substrate. An epitaxial layer is arranged on one surface of the GaAs substrate, and serves as a PN junction of the LED chip. An Au thin film is plated on the other surfa...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG XIANGJUN, FANG FEI, ZHOU XIAOLI, XU ZHIYUAN, CHEN KUNNAN, DAI SHIPAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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