AlGaInP light-emitting diode (LED) chip and cutting method for same

The invention discloses an AlGaInP light-emitting diode (LED) chip, which comprises a GaAs substrate serving as an epitaxial layer substrate. An epitaxial layer is arranged on one surface of the GaAs substrate, and serves as a PN junction of the LED chip. An Au thin film is plated on the other surface of the GaAs substrate, and serves as the cathode end of the LED chip. BeAu thin films arranged at equal intervals are deposited on the epitaxial layer, and an Au thin film is deposited on the BeAu thin films to form the anode ends of the LED chip. A cutting method for the AlGaInP LED chip specifically comprises the following steps of: (1) half-cutting the LED chip on one surfaces of the anode ends of the LED chip by using a diamond cutter to form cutting channels to separate the uniformly arranged anode ends of the LED chip, wherein the LED chip is 100 to 300 mu m thick; (2) coating a blue film at the anode ends of the LED chip, and coating a Mylar film at the cathode end of the LED chip; and (3) placing the LED