Semiconductor device and method for manufacturing same
According to an embodiment, a semiconductor device includes a first semiconductor layer of a first conductive type, a first main electrode provided on a first major surface side of the first semiconductor layer, and a second main electrode provided on a second major surface side of the first semicon...
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| creator | ASAHARA HIDETOSHI |
| description | According to an embodiment, a semiconductor device includes a first semiconductor layer of a first conductive type, a first main electrode provided on a first major surface side of the first semiconductor layer, and a second main electrode provided on a second major surface side of the first semiconductor layer. A pair of first control electrodes is provided within a trench provided from the first major surface side to the second major surface in the first semiconductor layer; and the first control electrodes are provided separately from each other in a direction parallel to the first major surface. Each of the first control electrodes faces an inner face of the trench via a first insulating film. A second control electrode is provided between the first control electrodes and a bottom face of the trench, and faces the inner face of the trench via a second insulating film. |
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A pair of first control electrodes is provided within a trench provided from the first major surface side to the second major surface in the first semiconductor layer; and the first control electrodes are provided separately from each other in a direction parallel to the first major surface. Each of the first control electrodes faces an inner face of the trench via a first insulating film. A second control electrode is provided between the first control electrodes and a bottom face of the trench, and faces the inner face of the trench via a second insulating film.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120926&DB=EPODOC&CC=CN&NR=102694021A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120926&DB=EPODOC&CC=CN&NR=102694021A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ASAHARA HIDETOSHI</creatorcontrib><title>Semiconductor device and method for manufacturing same</title><description>According to an embodiment, a semiconductor device includes a first semiconductor layer of a first conductive type, a first main electrode provided on a first major surface side of the first semiconductor layer, and a second main electrode provided on a second major surface side of the first semiconductor layer. A pair of first control electrodes is provided within a trench provided from the first major surface side to the second major surface in the first semiconductor layer; and the first control electrodes are provided separately from each other in a direction parallel to the first major surface. Each of the first control electrodes faces an inner face of the trench via a first insulating film. A second control electrode is provided between the first control electrodes and a bottom face of the trench, and faces the inner face of the trench via a second insulating film.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDALTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE0tychPUUgDiuYm5pWmJSaXlBZl5qUrFCfmpvIwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUknhnP0MDIzNLEwMjQ0djYtQAALa4LbM</recordid><startdate>20120926</startdate><enddate>20120926</enddate><creator>ASAHARA HIDETOSHI</creator><scope>EVB</scope></search><sort><creationdate>20120926</creationdate><title>Semiconductor device and method for manufacturing same</title><author>ASAHARA HIDETOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN102694021A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ASAHARA HIDETOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ASAHARA HIDETOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device and method for manufacturing same</title><date>2012-09-26</date><risdate>2012</risdate><abstract>According to an embodiment, a semiconductor device includes a first semiconductor layer of a first conductive type, a first main electrode provided on a first major surface side of the first semiconductor layer, and a second main electrode provided on a second major surface side of the first semiconductor layer. A pair of first control electrodes is provided within a trench provided from the first major surface side to the second major surface in the first semiconductor layer; and the first control electrodes are provided separately from each other in a direction parallel to the first major surface. Each of the first control electrodes faces an inner face of the trench via a first insulating film. A second control electrode is provided between the first control electrodes and a bottom face of the trench, and faces the inner face of the trench via a second insulating film.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device and method for manufacturing same |
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