Semiconductor device and method for manufacturing same

According to an embodiment, a semiconductor device includes a first semiconductor layer of a first conductive type, a first main electrode provided on a first major surface side of the first semiconductor layer, and a second main electrode provided on a second major surface side of the first semiconductor layer. A pair of first control electrodes is provided within a trench provided from the first major surface side to the second major surface in the first semiconductor layer; and the first control electrodes are provided separately from each other in a direction parallel to the first major surface. Each of the first control electrodes faces an inner face of the trench via a first insulating film. A second control electrode is provided between the first control electrodes and a bottom face of the trench, and faces the inner face of the trench via a second insulating film.