Making method of CMOS device for increasing carrier mobility and device structure

The invention relates to the field of integrated circuit manufacture, in particular to a making method of a CMOS (Complementary Metal Oxide Semiconductors) device for increasing carrier mobility and a device structure. The making method comprises the steps of: providing a substrate comprising an NMO...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIU GEZHI, HUANG XIAOLU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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