Making method of CMOS device for increasing carrier mobility and device structure

The invention relates to the field of integrated circuit manufacture, in particular to a making method of a CMOS (Complementary Metal Oxide Semiconductors) device for increasing carrier mobility and a device structure. The making method comprises the steps of: providing a substrate comprising an NMOS (N-channel Mental-Oxide-Semiconductor) active area, a PMOS (P-channel Mental-Oxide-Semiconductor) active area and a peripheral area; forming a plurality of shallow trench isolation structures on the peripheral area of the substrate; etching the substrate among the shallow trench isolation structures of the NMOS active region to form a tensile stress groove; filling a tensile stress material in the tensile stress groove; etching the substrate among the shallow trench isolation structures of the NMOS active area to form a tensile stress groove; and filling a tensile stress material in the tensile stress groove. The making method provided by the invention can not damage the shape of the device and avoids interferenc