Metal insulated semi-conductor (MIS) grid GaN base enhancing high electro mobility transistor (HEMT) device and manufacture method

The invention discloses a metal insulated semi-conductor (MIS) grid GaN base enhancing high electro mobility transistor (HEMT) device and a manufacture method, which mainly solve the problems that the existing GaN base enhancing device is low in threshold voltage, poor in controllability and low in reliability. The device comprises a substrate (1), a transition layer (2), a GaN main buffering layer (3) and an N-type AlGaN main barrier layer (4). A source (9) and a drain (10) are arranged on two sides of the top end of the N-type AlGaN main barrier layer (4), a grid (13) is arranged in the middle of the top end of the source (9) and the drain (10), a groove (5) is etched in the middle of the GaN main buffering layer (3), the bottom of the groove is a 0001 polarity plane, a lateral side of the groove is a non-0001 plane, and an inner wall of the groove extends outwards to form a GaN auxiliary buffering layer (6), a AlGaN auxiliary barrier layer (7) and a medium layer (8). The grid (13) is deposited on the mediu