Silicon germanium film parallel transfer method applied to uncooled infrared focal plane

The invention discloses a silicon germanium film parallel transfer method applied to an uncooled infrared focal plane. The silicon germanium film parallel transfer method comprises the following steps of: cleaning wafers; gluing and pre-roasting the wafers; fixing the wafers by using a clamp to form a wafer pair; performing thermal compression bonding on the wafers; removing an SI supporting layer and a BOX layer; and the like. According to the silicon germanium film parallel transfer method, the problems of deposition conditions of a sensitive material and processing compatibility of the CMOS (Complementary Metal Oxide Semiconductor) wafers are not required to be considered; the silicon germanium/silicon quantum well material with deposition temperature of over 600 DEG C can be used; the range of the sensitive material capable of being used by the uncooled infrared focal plane can be expanded; a polishing process of a wafer bonding face is saved; the adhesion of the material after parallel transfer is also b