Method for preparing bismuth ferric thin film material
The invention discloses a method for preparing a bismuth ferric thin film material, which comprises the following steps of: firstly, carrying out pretreatment on a substrate; then carrying out configuration of BiFeO3 precursor solution; and finally, completing preparation of the thin film material....
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a method for preparing a bismuth ferric thin film material, which comprises the following steps of: firstly, carrying out pretreatment on a substrate; then carrying out configuration of BiFeO3 precursor solution; and finally, completing preparation of the thin film material. According to the invention, a BiFeO3 thin film is prepared on a LaNiO3 bottom electrode by adoptinga simple sol-gel method to obtain a relatively big residual polarization and saturated electric hysteresis loop. According to the invention, water is used as a solvent; the water has low cost and hasno pollution. The method is low in preparation cost and is beneficial to large-scale industrial production. The prepared precursor solution has stable performance and can be stored for a long time. |
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