Travelling wave magnetic field method for improving resistivity uniformity of Czochralski silicon

The invention relates to a travelling wave magnetic field method for improving resistivity uniformity of Czochralski silicon. The travelling wave magnetic field method is characterized by comprising the following steps of: mounting a travelling wave magnetic field generator outside a single crystal...

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Bibliographische Detailangaben
Hauptverfasser: ZHANG XUENAN, LI JIANHONG, LIU YIBO, LI YAZHE, SONG DUMING, JIAN RUIJUAN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to a travelling wave magnetic field method for improving resistivity uniformity of Czochralski silicon. The travelling wave magnetic field method is characterized by comprising the following steps of: mounting a travelling wave magnetic field generator outside a single crystal furnace, and applying a traveling wave magnetic field to a molten silicon body during a crystal pulling process, wherein the traveling wave magnetic field generator utilizes a cylindrical generator, the convection of the molten silicon body is of axial symmetry through a cylindrical traveling wave magnetic field generated by the cylindrical generator, an interval between the N pole and the S pole of the traveling wave magnetic field is 1-50cm, the maximum intensity of the traveling wave magnetic field is 400-800 Gauss, and the speed of the traveling wave magnetic field is 1-4cm/s. Through the action of the traveling wave magnetic field, the convection of the molten silicon body at the same horizontal height is faci