Method for manufacturing semiconductor structure and vertical channel memory structure

The invention relates to a method for manufacturing a semiconductor structure and a vertical channel memory structure. The method comprises the following steps of: preparing the vertical channel memory structure for filling a physical isolation channel defined in the vertical channel memory structur...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HAN ZONGTING, HUANG YUFENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!