Organic film transistor and preparation method thereof
The invention discloses an organic film transistor and a preparation method thereof. The method comprises the following steps: preparing a silica insulating layer on a silicon wafer through oxidation; performing the OTS (octadecyl trichloro silane) modification on the silica insulating layer; deposi...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses an organic film transistor and a preparation method thereof. The method comprises the following steps: preparing a silica insulating layer on a silicon wafer through oxidation; performing the OTS (octadecyl trichloro silane) modification on the silica insulating layer; depositing and growing an organic semiconductor layer on the surface of the modified silica insulating layer; depositing and growing a metal oxide semiconductor layer on the surface of the organic semiconductor layer; and depositing and growing a layer of metal electrode on the surface of the metal oxide semiconductor layer. The organic film transistor provided by the invention has the advantages of high performance, simple process and good repeatability; and the cost of the organic film transistor is obviously lowered in comparison with that of the organic film transistor manufactured by the traditional process. |
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