Sense amplifier structure for semiconductor integrated circuit device

The invention provides a sense amplifier structure for a semiconductor integrated circuit device. The semiconductor integrated circuit device includes a first signal line and a second signal line, and a sense amplifier that includes a plurality of PMOS transistors and a plurality of NMOS transistors. The sense amplifier is configured to sense amplify a potential difference between the first signal line and the second signal line. The junction regions of the NMOS and PMOS transistors having the same conductivity type, and to which the same signal is applied, are formed in one integrated active region.