Wet-process silicon etching solution for P-type wafer

The invention provides a wet-process silicon etching solution for a P-type wafer, which comprises 2.00-7.00%vol of hydrofluoric acid (HF), 10.00-15.00%vol of sulfuric acid (H2SO4), 35.00-45.00%vol of nitric acid (HNO3) and 15.00-20.00%vol of phosphoric acid (H3PO4), wherein the concentration of the...

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Bibliographische Detailangaben
1. Verfasser:	GUO TIANZENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
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Beschreibung
Zusammenfassung:	The invention provides a wet-process silicon etching solution for a P-type wafer, which comprises 2.00-7.00%vol of hydrofluoric acid (HF), 10.00-15.00%vol of sulfuric acid (H2SO4), 35.00-45.00%vol of nitric acid (HNO3) and 15.00-20.00%vol of phosphoric acid (H3PO4), wherein the concentration of the HF is 49%, and the concentration of the H2SO4 is 98%. The etching solution can effectively solve the dispersive abnormity on the back surface of the P-type wafer.