Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning

Sophisticated gate electrode structures for N-channel transistors and P-channel transistors are patterned on the basis of substantially the same configuration while, nevertheless, the work function adjustment may be accomplished in an early manufacturing stage. For this purpose, diffusion layer and...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CARTER RICHARD, REIMER BERTHOLD, GRAETSCH FALK, BINDER ROBERT, BAYAH BORIS, TRENTZSCH MARTIN, BEYER SVEN
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Sophisticated gate electrode structures for N-channel transistors and P-channel transistors are patterned on the basis of substantially the same configuration while, nevertheless, the work function adjustment may be accomplished in an early manufacturing stage. For this purpose, diffusion layer and cap layer materials are removed after incorporating the desired work function metal species into the high-k dielectric material and subsequently a common gate layer stack is deposited and subsequently patterned.