Diode element and method for making the same

The invention provides a diode element and a method for making the same. The diode element comprises a diode film having a first surface and a second surface, a first conduction area providing current conduction with even current density, with the components of the first conduction area containing a first oxide, and a second conduction area which contains multiple current channels and provides current conduction with uneven current density, with the components of the current channels comprising a second oxide different from the first oxide. When the current is conducted between the first surface and the second surface, the density of the direct current passing the second conduction area is 10-time greater than that in the first conduction area. Further comprised are a first electrode formed upon the first surface and a second electrode formed upon the second surface. The method can solve the problem that the electric property of the film diode is restricted to the material when the prior art is employed, and