Composition for anisotropy conducting film, anisotropy conducting film, and semiconductor device
Provided is a composition for anisotropy conducting film. The composition is provided with a modulus of elasticity of 4,000 to 10, 000 MPA under 50 DEG C and the glass-transition temperature (Tg) of 110 to 150 DEG C after solidification. The composition bears the stress generated by opposite ends of...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KIM GYO BONG KI HYEUN CHOO SHIN JIONG HEUN LEE SUNG BOUNG CHEE GANG BAE |
| description | Provided is a composition for anisotropy conducting film. The composition is provided with a modulus of elasticity of 4,000 to 10, 000 MPA under 50 DEG C and the glass-transition temperature (Tg) of 110 to 150 DEG C after solidification. The composition bears the stress generated by opposite ends of the connecting substrate when being pressed and heated. The utility model also provides anisotropy conducting film made of the composition and a semiconductor apparatus comprising the anisotropy conducting film. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN102477263A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN102477263A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN102477263A3</originalsourceid><addsrcrecordid>eNrjZEhwzs8tyC_OLMnMz1NIyy9SSMzLLM4vKcovqFRIzs9LKU0uycxLV0jLzMnVISCXolCcmpsJlQCalJJalpmcysPAmpaYU5zKC6W5GRTdXEOcPXRTC_LjU4sLEpNT81JL4p39DA2MTMzNjcyMHY2JUQMATyw-OA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Composition for anisotropy conducting film, anisotropy conducting film, and semiconductor device</title><source>esp@cenet</source><creator>KIM GYO BONG ; KI HYEUN CHOO ; SHIN JIONG HEUN ; LEE SUNG BOUNG ; CHEE GANG BAE</creator><creatorcontrib>KIM GYO BONG ; KI HYEUN CHOO ; SHIN JIONG HEUN ; LEE SUNG BOUNG ; CHEE GANG BAE</creatorcontrib><description>Provided is a composition for anisotropy conducting film. The composition is provided with a modulus of elasticity of 4,000 to 10, 000 MPA under 50 DEG C and the glass-transition temperature (Tg) of 110 to 150 DEG C after solidification. The composition bears the stress generated by opposite ends of the connecting substrate when being pressed and heated. The utility model also provides anisotropy conducting film made of the composition and a semiconductor apparatus comprising the anisotropy conducting film.</description><language>chi ; eng</language><subject>ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE ; ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL ; PAINTS ; POLISHES ; SEMICONDUCTOR DEVICES ; USE OF MATERIALS AS ADHESIVES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120530&DB=EPODOC&CC=CN&NR=102477263A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120530&DB=EPODOC&CC=CN&NR=102477263A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM GYO BONG</creatorcontrib><creatorcontrib>KI HYEUN CHOO</creatorcontrib><creatorcontrib>SHIN JIONG HEUN</creatorcontrib><creatorcontrib>LEE SUNG BOUNG</creatorcontrib><creatorcontrib>CHEE GANG BAE</creatorcontrib><title>Composition for anisotropy conducting film, anisotropy conducting film, and semiconductor device</title><description>Provided is a composition for anisotropy conducting film. The composition is provided with a modulus of elasticity of 4,000 to 10, 000 MPA under 50 DEG C and the glass-transition temperature (Tg) of 110 to 150 DEG C after solidification. The composition bears the stress generated by opposite ends of the connecting substrate when being pressed and heated. The utility model also provides anisotropy conducting film made of the composition and a semiconductor apparatus comprising the anisotropy conducting film.</description><subject>ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE</subject><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>USE OF MATERIALS AS ADHESIVES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEhwzs8tyC_OLMnMz1NIyy9SSMzLLM4vKcovqFRIzs9LKU0uycxLV0jLzMnVISCXolCcmpsJlQCalJJalpmcysPAmpaYU5zKC6W5GRTdXEOcPXRTC_LjU4sLEpNT81JL4p39DA2MTMzNjcyMHY2JUQMATyw-OA</recordid><startdate>20120530</startdate><enddate>20120530</enddate><creator>KIM GYO BONG</creator><creator>KI HYEUN CHOO</creator><creator>SHIN JIONG HEUN</creator><creator>LEE SUNG BOUNG</creator><creator>CHEE GANG BAE</creator><scope>EVB</scope></search><sort><creationdate>20120530</creationdate><title>Composition for anisotropy conducting film, anisotropy conducting film, and semiconductor device</title><author>KIM GYO BONG ; KI HYEUN CHOO ; SHIN JIONG HEUN ; LEE SUNG BOUNG ; CHEE GANG BAE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN102477263A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2012</creationdate><topic>ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE</topic><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>USE OF MATERIALS AS ADHESIVES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM GYO BONG</creatorcontrib><creatorcontrib>KI HYEUN CHOO</creatorcontrib><creatorcontrib>SHIN JIONG HEUN</creatorcontrib><creatorcontrib>LEE SUNG BOUNG</creatorcontrib><creatorcontrib>CHEE GANG BAE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM GYO BONG</au><au>KI HYEUN CHOO</au><au>SHIN JIONG HEUN</au><au>LEE SUNG BOUNG</au><au>CHEE GANG BAE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Composition for anisotropy conducting film, anisotropy conducting film, and semiconductor device</title><date>2012-05-30</date><risdate>2012</risdate><abstract>Provided is a composition for anisotropy conducting film. The composition is provided with a modulus of elasticity of 4,000 to 10, 000 MPA under 50 DEG C and the glass-transition temperature (Tg) of 110 to 150 DEG C after solidification. The composition bears the stress generated by opposite ends of the connecting substrate when being pressed and heated. The utility model also provides anisotropy conducting film made of the composition and a semiconductor apparatus comprising the anisotropy conducting film.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN102477263A |
| source | esp@cenet |
| subjects | ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL PAINTS POLISHES SEMICONDUCTOR DEVICES USE OF MATERIALS AS ADHESIVES |
| title | Composition for anisotropy conducting film, anisotropy conducting film, and semiconductor device |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T20%3A21%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KIM%20GYO%20BONG&rft.date=2012-05-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN102477263A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |