Composition for anisotropy conducting film, anisotropy conducting film, and semiconductor device

Provided is a composition for anisotropy conducting film. The composition is provided with a modulus of elasticity of 4,000 to 10, 000 MPA under 50 DEG C and the glass-transition temperature (Tg) of 110 to 150 DEG C after solidification. The composition bears the stress generated by opposite ends of...

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Bibliographische Detailangaben
Hauptverfasser: KIM GYO BONG, KI HYEUN CHOO, SHIN JIONG HEUN, LEE SUNG BOUNG, CHEE GANG BAE
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Zusammenfassung:Provided is a composition for anisotropy conducting film. The composition is provided with a modulus of elasticity of 4,000 to 10, 000 MPA under 50 DEG C and the glass-transition temperature (Tg) of 110 to 150 DEG C after solidification. The composition bears the stress generated by opposite ends of the connecting substrate when being pressed and heated. The utility model also provides anisotropy conducting film made of the composition and a semiconductor apparatus comprising the anisotropy conducting film.