Method of manufacturing vertical diode

The invention relates to a method of manufacturing a vertical diode; the method comprises the following steps of: forming a dielectric layer on the surface of a substrate; removing the dielectric layer on the surface of a first type doping ion doped region inside the substrate, and forming a window in the dielectric layer on the surface of the substrate; forming a silicon nitride layer on the surface of the dielectric layer and the side wall and the bottom surface of the window; removing the silicon nitride layer on the surface of the dielectric layer and the bottom surface of the window, and forming a protective side wall on the side wall of the window; selectively depositing an epitaxial layer in the window; and carrying out heavy doping of second type doping ions on the epitaxial layer, and carrying out annealing treatment after doping to form the vertical diode. According to the method of manufacturing the vertical diode, an included angle between the side wall and the bottom surface of the window is prot