Film formation mask

Provided is a film formation mask capable of preventing slit-like openings from being closed by vibrations so as to form a highly precise patterned film with stability. In a film formation mask formed by providing multiple slit-like openings in a metal foil, the shape of the opening of at least one...

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Bibliographische Detailangaben
1. Verfasser:	KARAKI TETSUYA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided is a film formation mask capable of preventing slit-like openings from being closed by vibrations so as to form a highly precise patterned film with stability. In a film formation mask formed by providing multiple slit-like openings in a metal foil, the shape of the opening of at least one end of the slit-like openings is asymmetrical with respect to a center line of the width direction of the slit-like openings.