Preparation method for silicon surface anti-reflection nanometer array structure

The invention relates to a preparation method for a silicon surface anti-reflection nanometer array structure, which comprises the following steps that: silicon chips are placed into an inductively coupled plasma (ICP) system, and nanometer conical array structures are obtained at the silicon surface under the conditions of the basic vacuum being 1.0*10 Torr, the temperature being -100 DEG C to -140 DEG C, the gas flow rate ratio (SF6/O2) being 36/22 to 44/14, the air pressure being 6 to 25mTorr, the reactive ion etching (RIE) power being 3 to 6W and the ICP power being 800 to 1000W. The method adopts a low-temperature etching technology, the masking process is not needed, the large-area silicon surface nanometer conical array structure with the super anti-reflection characteristic is directly prepared through etching, and in addition, the regulation and control on the nanometer conical structure feature is realized through regulating and controlling the corresponding parameters.