Method of forming device with piezoresistor and accelerometer

A method of forming a device with a piezoresistor is disclosed herein. In one embodiment, the method includes providing a substrate, etching a trench in the substrate to form a vertical wall, growing a piezoresistor layer epitaxially on the vertical wall, and separating the vertical wall from an und...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: PRUITT BETH, YAMA GARY, BARLIAN ARNOLDUS ALVIN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A method of forming a device with a piezoresistor is disclosed herein. In one embodiment, the method includes providing a substrate, etching a trench in the substrate to form a vertical wall, growing a piezoresistor layer epitaxially on the vertical wall, and separating the vertical wall from an underlying layer of the substrate that extends along a horizontal plane such that the piezoresistor layer is movable with respect to the underlying layer within the horizontal plane.