Dual-grid channel conducting type adjustable single-wall carbon nano tube field effect transistor and preparation process thereof

The invention relates to a dual-grid channel conducting type adjustable single-wall carbon nano tube field effect transistor and a preparation process thereof. A required tube field effect transistor with a nanometer structure is constructed by using a growth manufacturing process of the 'bottom-up' micro-nano manufacturing technology and combining a deposit method and the integration technology of template-assembly to manufacture the tube field effect transistor with the nanometer structure in a 'bottom-up' mode; a growth template with a specific nanometer structure and a pattern is obtainedby means of nanometer impressing, reaction ion etching and the like; and the control growth and assembly of the nanometer structure are realized in the template by utilizing means such as growth and the like, so that a single-wall carbon nano tube random network channel conduction and channel conducting type adjustable dual-grid structural field effect transistor is prepared on a flexible substrate. The field effect trans