Depleted top gate junction field effect transistor (DTGJFET)

Depleted top gate junction field effect transistor (DTGJFET)

A junction field effect transistor semiconductor device and method include a top gate interposed between a source region and a drain region, and which extend across an entire surface of the channel region from the source region to the drain region. Top gate doping can be configured such that the top...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: GIBBY AARON
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A junction field effect transistor semiconductor device and method include a top gate interposed between a source region and a drain region, and which extend across an entire surface of the channel region from the source region to the drain region. Top gate doping can be configured such that the top gate can remain depleted throughout operation of the device. An embodiment of a device so configured can be used in precision, high-voltage applications.