Method for preparing ultraviolet sensor with gallium oxide one-dimensional sub-micrometer structure
The invention provides a method for preparing an ultraviolet sensor with a gallium oxide one-dimensional sub-micrometer structure. The method comprises the following six steps of: 1, placing a silicon carbide (SiC) substrate carrying metal gallium in a heating region of a tube-type furnace to heat;...
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| creator | XIN XIANDONG HAO WEICHANG CHENG JINYANG WANG TIANMIN |
| description | The invention provides a method for preparing an ultraviolet sensor with a gallium oxide one-dimensional sub-micrometer structure. The method comprises the following six steps of: 1, placing a silicon carbide (SiC) substrate carrying metal gallium in a heating region of a tube-type furnace to heat; 2, ventilating argon into the furnace before the temperature reaches 500 DEG C, continuously heating till the temperature is 900-1,000 DEG C, and preserving the heat for 1-3 hours; 3, cooling to a room temperature so as to obtain white floccus gallium oxide (Ga2O3) one-dimensional sub-micrometer structure; 4, picking out one or more prepared Ga2O3 one-dimensional sub-micrometer structures on the SiC substrate by using a semiconductor probe and placing on a sensor substrate; 5, fixing all the Ga2O3 one-dimensional sub-micrometer structures on the sensor substrate, and evaporating and plating aurum (Au) or argentum (Ag) to prepare an electrode by using a magnetron sputtering or thermal evaporation coating device; and |
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The method comprises the following six steps of: 1, placing a silicon carbide (SiC) substrate carrying metal gallium in a heating region of a tube-type furnace to heat; 2, ventilating argon into the furnace before the temperature reaches 500 DEG C, continuously heating till the temperature is 900-1,000 DEG C, and preserving the heat for 1-3 hours; 3, cooling to a room temperature so as to obtain white floccus gallium oxide (Ga2O3) one-dimensional sub-micrometer structure; 4, picking out one or more prepared Ga2O3 one-dimensional sub-micrometer structures on the SiC substrate by using a semiconductor probe and placing on a sensor substrate; 5, fixing all the Ga2O3 one-dimensional sub-micrometer structures on the sensor substrate, and evaporating and plating aurum (Au) or argentum (Ag) to prepare an electrode by using a magnetron sputtering or thermal evaporation coating device; and</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; SEMICONDUCTOR DEVICES ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111019&DB=EPODOC&CC=CN&NR=102222730A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111019&DB=EPODOC&CC=CN&NR=102222730A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>XIN XIANDONG</creatorcontrib><creatorcontrib>HAO WEICHANG</creatorcontrib><creatorcontrib>CHENG JINYANG</creatorcontrib><creatorcontrib>WANG TIANMIN</creatorcontrib><title>Method for preparing ultraviolet sensor with gallium oxide one-dimensional sub-micrometer structure</title><description>The invention provides a method for preparing an ultraviolet sensor with a gallium oxide one-dimensional sub-micrometer structure. 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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE |
| title | Method for preparing ultraviolet sensor with gallium oxide one-dimensional sub-micrometer structure |
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