Method for preparing ultraviolet sensor with gallium oxide one-dimensional sub-micrometer structure

The invention provides a method for preparing an ultraviolet sensor with a gallium oxide one-dimensional sub-micrometer structure. The method comprises the following six steps of: 1, placing a silicon carbide (SiC) substrate carrying metal gallium in a heating region of a tube-type furnace to heat; 2, ventilating argon into the furnace before the temperature reaches 500 DEG C, continuously heating till the temperature is 900-1,000 DEG C, and preserving the heat for 1-3 hours; 3, cooling to a room temperature so as to obtain white floccus gallium oxide (Ga2O3) one-dimensional sub-micrometer structure; 4, picking out one or more prepared Ga2O3 one-dimensional sub-micrometer structures on the SiC substrate by using a semiconductor probe and placing on a sensor substrate; 5, fixing all the Ga2O3 one-dimensional sub-micrometer structures on the sensor substrate, and evaporating and plating aurum (Au) or argentum (Ag) to prepare an electrode by using a magnetron sputtering or thermal evaporation coating device; and