Nonvolatile memory

The invention relates to a nonvolatile memory belonging to the technical field of micro-electronic device and memory. The nonvolatile memory replaces or partially replaces the grid medium oxidation layer in an MOS (Metal Oxide Semiconductor) transistor by using a material with adjustable dielectric constant so as to change the output characteristic of the device and realize data storage. The nonvolatile memory has the advantages of simple structure, easy integration and low cost, and the capability of being compatible to the traditional CMOS (Complementary Metal Oxide Semiconductor) technique; and the nonvolatile memory is beneficial to wide popularization and application.