Bipolar CMOS DMOS (BCD) integrated device based on N type extension layer and manufacture method thereof

A bipolar CMOS DMOS (BCD) integrated device based on a N type extension layer and a manufacture method thereof, which belongs to the semiconductor power device technology field, are disclosed. In the invention, a high voltage nLDMOS device, a high voltage nLIGB device, a low voltage PMOS device, a low voltage NMOS device, a low voltage PNP device and a low voltage NPN device are integrated on a same substrate. All devices are made in an N type extension layer arranged on a surface of a P type extension layer which is on a surface of a P type substrate. And junction isolations of the devices are realized through P isolation regions. N type buried layers are arranged between the P type substrate and the P type extension layer, wherein the P type substrate and the P type extension layer are under the high voltage devices. N type buried layers are/ are not arranged between the P type extension layer and the N type extension layer, wherein the P type extension layer and the N type extension layer are under the