Level shift circuit

The invention discloses a level shift circuit. Aiming at the defects that effective level shift can not be realized in case of meeting the conditions of a circuit layout smaller area and an input voltage with different duty ratios simultaneously, the level shift circuit is provided and comprises a d...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WU QIONGLE, YANG YUJUN, WANG ZEHUA, GAO DAWEI, LUO JIE, FANG JIAN, CHEN LVYUN, GUAN CHAO, BAI WENBIN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a level shift circuit. Aiming at the defects that effective level shift can not be realized in case of meeting the conditions of a circuit layout smaller area and an input voltage with different duty ratios simultaneously, the level shift circuit is provided and comprises a dipulse generating and shaping circuit, a high-low level shift switching circuit, a high-voltage pulse filter shaping circuit and an RS (remote sensing) trigger, wherein the high-low level shift switching circuit comprises an LDMOS (laterally diffused metal-oxide semiconductor) tube, an NMOS (N-channel metal oxide semiconductor) tube, a first resistor, a second resistor, a third resistor, a first diode and a second diode. Compared with an existing level shift circuit using two LDMOS tubes, only one LDMOS tube is used in the level shift circuit provided by the invention, thus reducing the layout area; and high-low level characterization of one-way pulses is used to input rising edges and falling edges of control sign