Memorizer with surface impedance state varying with electric domain and manufacturing method thereof

The invention belongs to the technical field of memorizers, and relates to a ferroelectric-film-based memorizer with surface impedance state varying with an electric domain and a manufacturing method thereof. The memorizer comprises an electrode and a resistance transition storage layer below the electrode, wherein the electrode is made of metal electrode material; and the resistance transition storage layer is made of ferroelectric film material. The memorizer is simple in structure, surface current is modulated by polarity variation of the electric domain in the ferroelectric film; based onthe specificity of the surface current in different polarization directions of the electric domain, the memorizer can switch between high impedance state and low impedance state under the condition of lower control voltage and extremely high storage density.